Room-temperature high spin–orbit torque due to quantum confinement in sputtered BixSe(1–x) films

Mahendra DC, Roberto Grassi, Junyang Chen, +12

Nature Materials

Materials ScienceSpin-orbit EffectsSpin-charge-orbit ConversionQuantum ScienceMagnetism +13

Giant Spin Pumping and Inverse Spin Hall Effect in the Presence of Surface and Bulk Spin−Orbit Coupling of Topological Insulator Bi₂Se₃

Mahdi Jamali, Joon Sue Lee, Jong Seok Jeong, +7

Nano Letters

Room-temperature perpendicular magnetization switching through giant spin-orbit torque from sputtered BixSe(1-x) topological insulator material

Mahendra DC, Mahdi Jamali, Junyang Chen, +9

arXiv (Cornell University)

Spin TorqueEngineeringSpin-charge ConversionGiant Spin-orbit TorqueSpin Hall Angle +23

Unidirectional spin Hall magnetoresistance in topological\n insulator/ferromagnetic layer heterostructures

Yang Lv, James Kally, Delin Zhang, +4

arXiv (Cornell University)

A Magnetic Tunnel Junction based True Random Number Generator with conditional perturb and real-time output probability tracking

Won Ho Choi, Yang Lv, Jong Yeon Kim, +4

SpintronicsElectrical EngineeringEngineeringPseudo-random SequenceReal-time Output Probability +5

Efficient In-Memory Processing Using Spintronics

Zamshed I. Chowdhury, Jonathan Harms, S. Karen Khatamifard, +6

IEEE Computer Architecture Letters

SpintronicsProcessor LogicData ResideEngineeringQuantum Computing +11

Bipolar Electric-Field Switching of Perpendicular Magnetic Tunnel Junctions through Voltage-Controlled Exchange Coupling

Delin Zhang, Mukund Bapna, Wei Jiang, +10

Nano Letters

Demonstration of Ru as the 4th ferromagnetic element at room temperature

Patrick Quarterman, Congli Sun, Javier García‐Barriocanal, +7

Nature Communications

Review of Magnetic Tunnel Junctions for Stochastic Computing

Brandon R. Zink, Yang Lv, Jian‐Ping Wang

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits

EngineeringMagnetic ResonanceStochastic ComputingMagnetoresistanceMagnetism +14

Telegraphic switching signals by magnet tunnel junctions for neural spiking signals with high information capacity

Brandon R. Zink, Yang Lv, Jian‐Ping Wang

Journal of Applied Physics

EngineeringSynaptic TransmissionEmerging Memory TechnologyMagnetic ResonanceMagnet Tunnel Junctions +22