Houqiang Xu

2.0 μ m wavelength InAs quantum dashes grown on a GaAs substrate using a metamorphic buffer layer

Ganesh Balakrishnan, Shenghong Huang, Thomas J. Rotter et al. · Applied Physics Letters · 2004 · 82 citations

Optical Materials, Engineering, Optoelectronic Devices +21

Effect of strain-compensation in stacked 1.3μm InAs∕GaAs quantum dot active regions grown by metalorganic chemical vapor deposition

Noppadon Nuntawong, S. Birudavolu, C.P. Hains et al. · Applied Physics Letters · 2004 · 74 citations

Materials Science, Ii-vi Semiconductor, Nanoscale Science +14

Competition between band gap and yellow luminescence in undoped GaN grown by MOVPE on sapphire substrate

Houqiang Xu, A. Bell, Zengfu Wang et al. · Journal of Crystal Growth · 2001 · 28 citations

Materials Science, Wide-bandgap Semiconductor, Engineering +8

Self-powered ultraviolet MSM photodetectors with high responsivity enabled by a lateral n⁺/n⁻ homojunction from opposite polarity domains

Chenyu Guo, Wei Guo, Yijun Dai et al. · Optics Letters · 2021 · 24 citations

Annealing effect on the surface morphology and photoluminescence of InGaAs/GaAs quantum dots grown by molecular beam epitaxy

Weihong Jiang, Houqiang Xu, Bing Xu et al. · Journal of Crystal Growth · 2000 · 22 citations

Ii-vi Semiconductor, Photoluminescence, Engineering +8