Optical Spin Injection and Spin Lifetime in Ge Heterostructures

Fabio Pezzoli, Federico Bottegoni, Dhara J. Trivedi, +9

Physical Review Letters

Temperature-Dependent Photoluminescence Characteristics of GeSn Epitaxial Layers

Fabio Pezzoli, A Giorgioni, D Patchett, +1

ACS Photonics

Materials ScienceSemiconductorsOptical MaterialsDislocation NucleationEngineering +13

Spin and energy relaxation in germanium studied by spin-polarized direct-gap photoluminescence

Fabio Pezzoli, Lan Qing, A Giorgioni, +4

Physical Review B

EngineeringDirect Band GapMagnetic ResonanceSpin DynamicSpin Phenomenon +15

Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells

A Giorgioni, Stefano Paleari, Stefano Cecchi, +6

Nature Communications

Valley-dependent spin polarization and long-lived electron spins in germanium

A Giorgioni, Elisa Vitiello, E. Grilli, +2

Applied Physics Letters

EngineeringSpin DynamicSpin PhenomenonIi-vi SemiconductorValley-dependent Spin Polarization +14

Photoluminescence decay of direct and indirect transitions in Ge/SiGe multiple quantum wells

A Giorgioni, E. Gatti, E. Grilli, +5

Journal of Applied Physics

EngineeringGe/si0.15ge0.85 TypePhotoluminescence DecaySemiconductor NanostructuresSemiconductors +15

Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates

Fabio Pezzoli, A Giorgioni, Kevin Gallacher, +9

Applied Physics Letters

Progress towards Spin-Based Light Emission in Group IV Semiconductors

S De Cesari, Elisa Vitiello, A Giorgioni, +1

Electronics

EngineeringOptoelectronic DevicesElectronic PropertiesSpintronic MaterialSemiconductors +14

Optical tailoring of carrier spin polarization in Ge/SiGe multiple quantum wells

A Giorgioni, Fabio Pezzoli, E. Gatti, +6

Applied Physics Letters

Quantum ScienceSpintronicsPhotonicsQuantum PhotonicsElectrical Engineering +12

Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates

Elisa Vitiello, Michele Virgilio, A Giorgioni, +7

Physical Review B

Direct Gap DoubletWide-bandgap SemiconductorEngineeringTensile-strained Ge FilmsSilicon On Insulator +15