Concepedia
Statistics
Publications
4
Citations
44
H-Index
Active since
2018
Affiliations
Ioffe Institute(Current)
Helmholtz-Zentrum Berlin für Materialien und Energie
Technische Universität Dresden
A. P. Solonitsyna is an author at Ioffe Institute specializing in materials science, materials engineering, and semiconductor materials.
Publications per year
2018–2019
The p-n junction formation effect of an Ar <sup>+</sup> ion beam on the n-GaAs surface
V. М. Mikoushkin, V. Bryzgalov, S. Yu. Nikonov et al. · Europhysics Letters (EPL) · 2018 · 12 citations
Engineering, Materials Science, Physics +17
Modification of the GaAs native oxide surface layer into the layer of the Ga2O3 dielectric by an Ar+ ion beam
V. М. Mikoushkin, V. Bryzgalov, E. A. Makarevskaya et al. · Surface and Coatings Technology · 2018 · 11 citations
Engineering, Materials Engineering, Materials Science +16
Composition and Band Structure of the Native Oxide Nanolayer on the Ion Beam Treated Surface of the GaAs Wafer
V. М. Mikoushkin, V. Bryzgalov, S. Yu. Nikonov et al. · Semiconductors · 2018 · 11 citations
Natural Sciences, Materials Engineering, Materials Science +17
Elemental arsenic in the natural oxide on the MBE GaAs surface
V. М. Mikoushkin, A. P. Solonitsyna, E. A. Makarevskaya · Applied Surface Science · 2019 · 10 citations
Engineering, Materials Engineering, Materials Science +11
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