Ho Hoang Huy

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Active since

2021

Affiliations

Tokyo Institute of Technology(Current)

Western Digital (United States)

Ho Hoang Huy is an author at Tokyo Institute of Technology specializing in materials science, condensed matter physics, and perpendicular magnetic anisotropy.

ORCID

Publications per year

2021–2024

Publications

Low power spin–orbit torque switching in sputtered BiSb topological insulator/perpendicularly magnetized CoPt/MgO multilayers on oxidized Si substrate

Tuo Fan, Nguyen Huynh Duy Khang, Takanori Shirokura et al. · Applied Physics Letters · 2021 · 28 citations

Natural Sciences, Materials Science, Physics +17

Improvement of the Effective Spin Hall Angle by Inserting an Interfacial Layer in Sputtered BiSb Topological Insulator (Bottom)/Ferromagnet With In-Plane Magnetization

Julian Sasaki, Ho Hoang Huy, Nguyen Huynh Duy Khang et al. · IEEE Transactions on Magnetics · 2021 · 14 citations

Natural Sciences, Materials Science, Physics +16

Large inverse spin Hall effect in BiSb topological insulator for 4 Tb/in2 magnetic recording technology

Ho Hoang Huy, Julian Sasaki, Nguyen Huynh Duy Khang et al. · Applied Physics Letters · 2023 · 14 citations

Natural Sciences, Materials Science, Physics +17

High spin Hall angle in BiSb topological insulator and perpendicularly magnetized CoFeB/MgO multilayers with metallic interfacial layers

Zhang Ruixian, Ho Hoang Huy, Takanori Shirokura et al. · Applied Physics Letters · 2024 · 14 citations

Natural Sciences, Materials Science, Physics +17

Integration of BiSb Topological Insulator and CoFeB/MgO With Perpendicular Magnetic Anisotropy Using an Oxide Interfacial Layer for Ultralow Power SOT-MRAM Cache Memory

Ho Hoang Huy, Zhang Ruixian, Takanori Shirokura et al. · IEEE Transactions on Magnetics · 2023 · 11 citations

Natural Sciences, Materials Science, Physics +17

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