Interface measurements of heterojunction band lineups with the Vanderbilt free-electron laser

C. Coluzza, E. Tuncel, J. L. Staehli, +12

Physical review. B, Condensed matter

Interface MeasurementsPhotonicsFree-electron LasersHigh AccuracyHeterojunction Band Lineups +13

Unpinned Schottky barrier formation at metal–GaAs interfaces

L. J. Brillson, R. E. Viturro, C. Mailhiot, +8

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

SemiconductorsMaterials ScienceSemiconductor TechnologyEngineeringCrystalline Defects +10

Band bending and interface states for metals on GaAs

R. E. Viturro, J. L. Shaw, C. Mailhiot, +8

Applied Physics Letters

Materials ScienceElectrical EngineeringPhotoluminescenceEngineeringPhysics +11

Trends in temperature-dependent Schottky barrier formation: The Ga/GaAs and Mn/GaAs interfaces

K. Stiles, S. F. Horng, Antoine Kahn, +3

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

Materials ScienceSemiconductorsX-ray SpectroscopyEngineeringPhysics +11

Free-electron laser studies of direct and indirect two-photon absorption in germanium

E. Tuncel, J. L. Staehli, C. Coluzza, +7

Physical Review Letters

EngineeringLaser ScienceCavity QedTwo-photon AbsorptionIndirect Two-photon Absorption +18

Microscopic manipulation of homojunction band lineups

M. Marsi, S. La Rosa, Y. Hwu, +7

Journal of Applied Physics

EngineeringMolecular Self-assemblyMicroscopic ManipulationBand DiscontinuitiesMaterials Science +14

Synchrotron radiation induced metal deposition on semiconductors: Mo(CO)6 on Si (111)

R. Zanoni, M. N. Piancaśtelli, J. T. McKinley, +1

Applied Physics Letters

X-ray CrystallographyX-ray SpectroscopyEngineeringMetal DepositionChemistry +17

Benzene adsorption on low-temperature silicon: A synchrotron-radiation photoemission study of valence and core states

M. N. Piancaśtelli, M. K. Kelly, Y. A. Chang, +2

Physical review. B, Condensed matter

Low-temperature SiliconEngineeringChemistrySilicon On InsulatorAdsorption States +16

Control of Ge homojunction band offsets via ultrathin Ga–As dipole layers

J. T. McKinley, Y. Hwu, Benjamin E. C. Koltenbah, +3

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Wide-bandgap SemiconductorEngineeringOptoelectronic DevicesGe HomojunctionsEv Band Offsets +15

Schottky-like correction terms in heterojunction band lineups

David W. Niles, Ming Tang, J. T. McKinley, +2

Physical review. B, Condensed matter

Materials ScienceAluminium NitrideIi-vi SemiconductorEngineeringPhysics +12