Uwe Strauß

500 nm electrically driven InGaN based laser diodes

Desirée Queren, Adrian Avramescu, G. Brüderl et al. · Applied Physics Letters · 2009 · 149 citations

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +13

InGaN laser diodes with 50 mW output power emitting at 515 nm

Adrian Avramescu, Teresa Lermer, Jens Müller et al. · Applied Physics Letters · 2009 · 120 citations

Photonics, Electrical Engineering, Solid-state Lighting +15

Quality and thermal stability of thin InGaN films

Desirée Queren, Marc Schillgalies, Adrian Avramescu et al. · Journal of Crystal Growth · 2009 · 64 citations

Materials Engineering, Materials Science, Engineering +6

Pros and cons of green InGaN laser on <i>c</i>‐plane GaN

Uwe Strauß, Adrian Avramescu, Teresa Lermer et al. · physica status solidi (b) · 2010 · 50 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +21

Comparison of degradation mechanisms of blue‐violet laser diodes grown on SiC and GaN substrates

Michael Furitsch, Christoph Eichler, Karl Engl et al. · physica status solidi (a) · 2006 · 30 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +13