F. Renner

Quantitative analysis of the polarization fields and absorption changes in InGaN/GaN quantum wells with electroabsorption spectroscopy

F. Renner, P. Kiesel, G. H. Döhler et al. · Applied Physics Letters · 2002 · 124 citations

Polarization Fields, Wide-bandgap Semiconductor, Engineering +16

Efficient terahertz emission from ballistic transport enhanced n-i-p-n-i-p superlattice photomixers

Sascha Preu, F. Renner, S. Malzer et al. · Applied Physics Letters · 2007 · 62 citations

Terahertz Technology, Efficient Terahertz Emission, Engineering +16

THz-photomixer based on quasi-ballistic transport

G. H. Döhler, F. Renner, O. Klar et al. · Semiconductor Science and Technology · 2005 · 62 citations

Thz Photonics, Engineering, Terahertz Photonics +17

Enhanced recombination tunneling in GaAs pn junctions containing low-temperature-grown-GaAs and ErAs layers

P. Pohl, F. Renner, M. Eckardt et al. · Applied Physics Letters · 2003 · 38 citations

Semiconductors, Enhanced Recombination, Electrical Engineering +15

Electroabsorption Spectroscopy ? Direct Determination of the Strong Piezoelectric Field in InGaN/GaN Heterostructure Diodes

P. Kiesel, F. Renner, Michael Kneissl et al. · physica status solidi (a) · 2001 · 13 citations

Wide-bandgap Semiconductor, Optical Materials, Strong Piezoelectric Field +21