T. Roggenbauer

A 0.25μm CMOS based 70V smart power technology with deep trench for high-voltage isolation

V. Parthasarathy, Ronghua Zhu, V. Khemka et al. · 2003 · 56 citations

Engineering, Electrical Engineering, Low-power Design +15

Detection and Optimization of Temperature Distribution Across Large-Area Power MOSFETs to Improve Energy Capability

V. Khemka, V. Parthasarathy, Ronghua Zhu et al. · IEEE Transactions on Electron Devices · 2004 · 41 citations

Engineering, Electrical Engineering, Microelectronics +16

Experimental and theoretical analysis of energy capability of RESURF LDMOSFETs and its correlation with static electrical safe operating area (SOA)

V. Khemka, V. Parthasarathy, Ronghua Zhu et al. · IEEE Transactions on Electron Devices · 2002 · 30 citations

Engineering, Computer Engineering, Electrical Engineering +17

Implementation of high-side, high-voltage RESURF LDMOS in a sub-half micron smart power technology

Ronghua Zhu, V. Parthasarathy, V. Khemka et al. · 2002 · 28 citations

Engineering, Electrical Engineering, Low-power Design +7

Stepped-Drift LDMOSFET: A Novel Drift Region Engineered Device for Advanced Smart Power Technologies

Ronghua Zhu, V. Khemka, A. Bose et al. · 2006 · 23 citations

Engineering, Electrical Engineering, Microelectronics +12