Felix Heinz

20-nm In_0.8Ga_0.2As MOSHEMT MMIC Technology on Silicon

A. Tessmann, Arnulf Leuther, Felix Heinz et al. · IEEE Journal of Solid-State Circuits · 2019 · 36 citations

Gaas Technology, Semiconductor Technology, Electrical Engineering +10

A 50-nm Gate-Length Metamorphic HEMT Technology Optimized for Cryogenic Ultra-Low-Noise Operation

Felix Heinz, Fabian Thome, Arnulf Leuther et al. · IEEE Transactions on Microwave Theory and Techniques · 2021 · 33 citations · Full text

Cryogenic Ultra-low-noise Operation, Electrical Engineering, Gate Length +12

W-Band LNA MMICs Based on a Noise-Optimized 50-nm Gate-Length Metamorphic HEMT Technology

Fabian Thome, Arnulf Leuther, Felix Heinz et al. · 2019 · 23 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, W-band Lna Mmics +12

InGaAs MOSHEMT <i>W</i>-Band LNAs on Silicon and Gallium Arsenide Substrates

Fabian Thome, Felix Heinz, Arnulf Leuther · IEEE Microwave and Wireless Components Letters · 2020 · 22 citations · Full text

Wide-bandgap Semiconductor, Engineering, Gallium Arsenide Substrates +17

A Scalable Small-Signal and Noise Model for High-Electron-Mobility Transistors Working Down to Cryogenic Temperatures

Felix Heinz, Fabian Thome, Dirk Schwantuschke et al. · IEEE Transactions on Microwave Theory and Techniques · 2021 · 13 citations · Full text

Cryogenic Temperatures, Engineering, Integrated Circuits +18