Martin Heilmann - Concepedia

Author

Martin Heilmann

Max Planck Institute for the Science of Light ORCID

Also Known As

Heilmann, Martin, M Heilmann, M. Heilmann, Martin Heilmann

Publications

759

Citations

H-Index

Concepts

All Affiliations

Max Planck Institute for the Science of Light Helmholtz-Zentrum Berlin für Materialien und Energie Friedrich-Alexander-Universität Erlangen-Nürnberg Freie Universität Berlin Paul Drude Institute for Solid State Electronics

About

Martin Heilmann is an author at Max Planck Institute for the Science of Light specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	19	508
2	Applied Physics	15	19	508
3	Electrical Engineering	6	6	196
4	Chemistry	1	1	28
5	Materials Engineering	1	1	15

Martin Heilmann

Publications

727

Citations

H-Index

Page 1

	Year	Citations
Vertically Oriented Growth of GaN Nanorods on Si Using Graphene as an Atomically Thin Buffer Layer Martin Heilmann, A. Mazid Munshi, George Sarau, Nano Letters	2016	81
The Role of Si during the Growth of GaN Micro- and Nanorods Christian Tessarek, Martin Heilmann, Eduard Butzen, Crystal Growth & Design Wide-bandgap SemiconductorEngineeringOptoelectronic DevicesSemiconductorsElectronic Devices	2014	75
Efficient Nitrogen Doping of Single-Layer Graphene Accompanied by Negligible Defect Generation for Integration into Hybrid Semiconductor Heterostructures George Sarau, Martin Heilmann, Muhammad Y. Bashouti, ACS Applied Materials & Interfaces	2017	49
Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes Ashutosh Kumar, Martin Heilmann, Michael Latzel, Scientific Reports	2016	42
Controlling morphology and optical properties of self-catalyzed, mask-free GaN rods and nanorods by metal-organic vapor phase epitaxy Christian Tessarek, Muhammad Y. Bashouti, Martin Heilmann, Journal of Applied Physics Materials ScienceEngineeringMask-free Gan RodsNanomaterialsNanotechnology	2013	41
Improving the Optical Properties of Self-Catalyzed GaN Microrods toward Whispering Gallery Mode Lasing Christian Tessarek, Robert Röder, Tom Michalsky, ACS Photonics Optical MaterialsEngineeringOptoelectronic DevicesMicro-optical ComponentOptical Properties	2014	38
Growth of GaN Micro- and Nanorods on Graphene-Covered Sapphire: Enabling Conductivity to Semiconductor Nanostructures on Insulating Substrates Martin Heilmann, George Sarau, Manuela Göbelt, Crystal Growth & Design Wide-bandgap SemiconductorEngineeringGraphene-covered SapphireSemiconductorsGraphene Nanomeshes	2015	36
Nanoscale Characterization of Carrier Dynamic and Surface Passivation in InGaN/GaN Multiple Quantum Wells on GaN Nanorods Weijian Chen, Xiaoming Wen, Michael Latzel, ACS Applied Materials & Interfaces EngineeringLuminescence PropertyKoh TreatmentCarrier DynamicCompound Semiconductor	2016	34
Significant performance enhancement of InGaN/GaN nanorod LEDs with multi-layer graphene transparent electrodes by alumina surface passivation M. Lätzel, Pascal Büttner, George Sarau, Nanotechnology Ingan/gan Nanorod LedsEngineeringNanoelectronicsCompound SemiconductorNanotextured Surfaces	2016	34
Defect mediated van der Waals epitaxy of hexagonal boron nitride on graphene Martin Heilmann, Muhammad Y. Bashouti, H. Riechert, 2D Materials Materials ScienceGraphene NanomeshesBoron NitrideNucleation ApartEngineering	2018	30

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