Martin Heilmann

Vertically Oriented Growth of GaN Nanorods on Si Using Graphene as an Atomically Thin Buffer Layer

Martin Heilmann, A. Mazid Munshi, George Sarau et al. · Nano Letters · 2016 · 81 citations

The Role of Si during the Growth of GaN Micro- and Nanorods

Christian Tessarek, Martin Heilmann, Eduard Butzen et al. · Crystal Growth & Design · 2014 · 75 citations

Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +17

Efficient Nitrogen Doping of Single-Layer Graphene Accompanied by Negligible Defect Generation for Integration into Hybrid Semiconductor Heterostructures

George Sarau, Martin Heilmann, Muhammad Y. Bashouti et al. · ACS Applied Materials & Interfaces · 2017 · 49 citations

Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes

Ashutosh Kumar, Martin Heilmann, Michael Latzel et al. · Scientific Reports · 2016 · 42 citations · Full text

Controlling morphology and optical properties of self-catalyzed, mask-free GaN rods and nanorods by metal-organic vapor phase epitaxy

Christian Tessarek, Muhammad Y. Bashouti, Martin Heilmann et al. · Journal of Applied Physics · 2013 · 41 citations · Full text

Materials Science, Engineering, Mask-free Gan Rods +15