Suppression of the orientation effects on bandgap in graphene nanoribbons in the presence of edge disorder

Damien Querlioz, Y. Apertet, A. Valentin, +4

Applied Physics Letters

Materials ScienceGraphene NanomeshesGraphene Quantum DotEngineeringPhysics +12

Large Tunneling Magnetoresistance in VSe₂/MoS₂ Magnetic Tunnel Junction

Jiaqi Zhou, Junfeng Qiao, Chun‐Gang Duan, +3

ACS Applied Materials & Interfaces

Impact of the Radial Ionization Profile on SEE Prediction for SOI Transistors and SRAMs Beyond the 32-nm Technological Node

M. Raine, G. Hubert, Marc Gaillardin, +5

IEEE Transactions on Nuclear Science

Electrical EngineeringIon ImplantationEngineeringPhysicsNanoelectronics +13

On the Ability of the Particle Monte Carlo Technique to Include Quantum Effects in Nano-MOSFET Simulation

Damien Querlioz, Jérôme Saint-Martin, Karim Huet, +5

IEEE Transactions on Electron Devices

EngineeringNanocomputingSemiconductor DeviceQuantum ComputingNanoelectronics +18

Electronic transport and spin-polarization effects of relativisticlike particles in mesoscopic graphene structures

V. Nam, Việt Hùng Nguyễn, Philippe Dollfus, +1

Journal of Applied Physics

EngineeringSpin-charge ConversionSpin SystemsGraphene StructureSpin-polarization Effects +22

Effect of discrete impurities on electron transport in ultrashort MOSFET using 3D MC simulation

P. Dollfus, Arnaud Bournel, S. Galdin, +2

IEEE Transactions on Electron Devices

Spin-filter induced large magnetoresistance in 2D van der Waals magnetic tunnel junctions

Wei Yang, Yuan Cao, Jiangchao Han, +6

Nanoscale

Multi sub-band Monte Carlo simulation of an ultra-thin double gate MOSFET with 2D electron gas

Jérôme Saint-Martin, Arnaud Bournel, Florian Monsef, +2

Semiconductor Science and Technology

Device ModelingElectrical EngineeringSemiconductor DeviceMulti Sub-band TransportEngineering +9

Gate-induced spin precession in an In_0.53Ga_0.47As two dimensional electron gas

Arnaud Bournel, Philippe Dollfus, P. Bruno, +1

The European Physical Journal Applied Physics

EngineeringSpin-charge ConversionGate-induced Spin PrecessionSpin SystemsMagnetic Resonance +17

Controllable spin-dependent transport in armchair graphene nanoribbon structures

Việt Hùng Nguyễn, V. Nam, Arnaud Bournel, +2

Journal of Applied Physics

EngineeringSpin-charge ConversionTight Binding ModelSpintronic MaterialSemiconductors +16