Haiyang Hong

Poly‐GeSn Junctionless Thin‐Film Transistors on Insulators Fabricated at Low Temperatures via Pulsed Laser Annealing

Lu Zhang, Haiyang Hong, Chunyu Yu et al. · physica status solidi (RRL) - Rapid Research Letters · 2019 · 26 citations

Engineering, Optoelectronic Devices, Thin Film Process Technology +17

Broadband 400-2400 nm Ge heterostructure nanowire photodetector fabricated by three-dimensional Ge condensation technique

Guangyang Lin, Dongxue Liang, Chunyu Yu et al. · Optics Express · 2019 · 20 citations · Full text

Formation of high-Sn content polycrystalline GeSn films by pulsed laser annealing on co-sputtered amorphous GeSn on Ge substrate

Lu Zhang, Haiyang Hong, Yisen Wang et al. · Chinese Physics B · 2017 · 16 citations

Optical Materials, Engineering, Ge Substrate +17

High-Sn fraction GeSn quantum dots for Si-based light source at 1.55 <i>μ</i>m

Lu Zhang, Haiyang Hong, Cheng Li et al. · Applied Physics Express · 2019 · 14 citations

Optical Materials, Engineering, Optoelectronic Devices +19

Low-temperature plasma enhanced atomic layer deposition of large area HfS₂ nanocrystal thin films*

Ailing Chang, Yichen Mao, Zhiwei Huang et al. · Chinese Physics B · 2020 · 10 citations