M. I. Abdalla

Influence of growth conditions on tin incorporation in GaAs grown by molecular beam epitaxy

F. Alexandre, C. Raisin, M. I. Abdalla et al. · Journal of Applied Physics · 1980 · 46 citations

Engineering, Crystal Growth Technology, Optoelectronic Devices +18

The epitaxial growth and structure of Films of CdTe evaporated onto Ge

M. I. Abdalla, D. B. Holt · physica status solidi (a) · 1973 · 23 citations

D.C. electroluminescence mechanisms in ZnS devices

M. I. Abdalla, Antoine G. Godin, J. P. Noblanc · Journal of Luminescence · 1979 · 14 citations

Electrical Engineering, Photoluminescence, Engineering +4

Epitaxial growth and structure of CdS films evaporated onto Ge

M. I. Abdalla, D. B. Holt, D.M. Wilcox · Journal of Materials Science · 1973 · 12 citations

Materials Science, Engineering, Surface Science +6

Directional coupler switch in molecular-beam epitaxy GaAs

A. Carenco, L. Menigaux, F. Alexandre et al. · Applied Physics Letters · 1979 · 12 citations

Semiconductor Technology, Photonics, Electrical Engineering +15