Peter F. Satterthwaite

Author

Stanford University ORCID

Also Known As

P. F. Satterthwaite, Peter F. Satterthwaite, Peter Satterthwaite, Satterthwaite, Peter F.

Publications

394

Citations

H-Index

Concepts

All Affiliations

Stanford University Massachusetts Institute of Technology Vaughn College of Aeronautics and Technology Infineon Technologies (Austria)

About

Peter F. Satterthwaite is an author at Stanford University specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	330
2	Applied Physics	8	8	272
3	Electrical Engineering	7	7	239
4	Chemical Engineering	2	2	77
5	Chemistry	1	1	33

Peter F. Satterthwaite

Publications

368

Citations

H-Index

Page 1

	Year	Citations
High Responsivity, Low Dark Current Ultraviolet Photodetectors Based on Two-Dimensional Electron Gas Interdigitated Transducers Peter F. Satterthwaite, Ananth Saran Yalamarthy, Noah Scandrette, ACS Photonics Wide-bandgap SemiconductorOptical MaterialsEngineeringGan Photodetector ArchitectureOptoelectronic Devices	2018	83
Van der Waals device integration beyond the limits of van der Waals forces using adhesive matrix transfer Peter F. Satterthwaite, Weikun Zhu, Patricia Jastrzebska‐Perfect, Nature Electronics Materials ScienceWafer Scale ProcessingEngineeringMicrofabricationNanotechnology	2023	58
Stable Operation of AlGaN/GaN HEMTs for 25 h at 400°C in air Saleh Kargarrazi, Ananth Saran Yalamarthy, Peter F. Satterthwaite, IEEE Journal of the Electron Devices Society Wide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineeringStable Operation	2019	46
Conductance and capacitance of bilayer protective oxides for silicon water splitting anodes Andrew G. Scheuermann, Kyle W. Kemp, Kechao Tang, Energy & Environmental Science Chemical EngineeringElectrical EngineeringElectrical ConductanceEngineeringOxide Electronics	2015	44
Engineering Interfacial Silicon Dioxide for Improved Metal–Insulator–Semiconductor Silicon Photoanode Water Splitting Performance Peter F. Satterthwaite, Andrew G. Scheuermann, Paul K. Hurley, ACS Applied Materials & Interfaces EngineeringInorganic PhotochemistryPhoto-electrochemical CellChemistrySilicon On Insulator	2016	33
On-site growth of perovskite nanocrystal arrays for integrated nanodevices Patricia Jastrzebska‐Perfect, Weikun Zhu, Mayuran Saravanapavanantham, Nature Communications	2023	28
Transient and steady-state readout of nanowire gas sensors in the presence of low-frequency noise Peter F. Satterthwaite, Sebastian Eberle, Stefan Nedelcu, Sensors and Actuators B Chemical NanosensorsEngineeringGas SensorLow-frequency NoiseSensor Drift	2019	19
Micro-Tesla Offset in Thermally Stable AlGaN/GaN 2DEG Hall Plates Using Current Spinning Karen M. Dowling, Hannah S. Alpert, Ananth Saran Yalamarthy, IEEE Sensors Letters Low Residual OffsetWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	2019	19
Extended Exposure of Gallium Nitride Heterostructure Devices to a Simulated Venus Environment Savannah R. Eisner, Hannah S. Alpert, Caitlin A. Chapin, Wide-bandgap SemiconductorSimulated Venus EnvironmentEngineeringOptoelectronic DevicesDevice Architectures	2021	17
Low Offset and Noise in High Biased GaN 2DEG Hall-Effect Plates Investigated With Infrared Microscopy Karen M. Dowling, Tanya Liu, Hannah S. Alpert, Journal of Microelectromechanical Systems Low Residual OffsetWide-bandgap SemiconductorEngineeringSemiconductor DeviceElectronic Devices	2020	11

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