Max F. Lynam

Statistics

Publications

Citations

H-Index

Active since

2012

Affiliations

MacDiarmid Institute for Advanced Materials and Nanotechnology(Current)

RMIT University

University of Canterbury

Max F. Lynam is an author at MacDiarmid Institute for Advanced Materials and Nanotechnology specializing in applied physics, electrical engineering, and semiconductors.

Top concepts

Thin FilmsEngineeringSemiconductorsApplied PhysicsMaterial ScienceOxide SemiconductorsElectrical Engineering

Publications per year

2012–2015

Publications

Stable <i>n</i>-channel metal-semiconductor field effect transistors on ZnO films deposited using a filtered cathodic vacuum arc

Salim Ahmed Ali Elzwawi, H-S. Kim, Max F. Lynam et al. · Applied Physics Letters · 2012 · 18 citations

Materials Science, Semiconductors, Electrical Engineering +12

Effect of Schottky gate type and channel defects on the stability of transparent ZnO MESFETs

Salim Ahmed Ali Elzwawi, A. Hyland, Max F. Lynam et al. · Semiconductor Science and Technology · 2015 · 11 citations

1–2 of 2