Amit Sangai

A SPICE-Compatible Model of MOS-Type Graphene Nano-Ribbon Field-Effect Transistors Enabling Gate- and Circuit-Level Delay and Power Analysis Under Process Variation

Yingyu Chen, Amit Sangai, Artem Rogachev et al. · IEEE Transactions on Nanotechnology · 2015 · 97 citations · Full text

Device Modeling, Graphene Nanomeshes, Electrical Engineering +11

Analytical SPICE-Compatible Model of Schottky-Barrier-Type GNRFETs With Performance Analysis

Morteza Gholipour, Yingyu Chen, Amit Sangai et al. · IEEE Transactions on Very Large Scale Integration (VLSI) Systems · 2015 · 62 citations

Device Modeling, Sb Tunneling, Electrical Engineering +15

A SPICE-Compatible Model of Graphene Nano-Ribbon Field-Effect Transistors Enabling Circuit-Level Delay and Power Analysis under Process Variation

Yingyu Chen, Artem Rogachev, Amit Sangai et al. · Design, Automation & Test in Europe Conference & Exhibition (DATE), 2013 · 2013 · 61 citations

Device Modeling, Graphene Nanomeshes, Electrical Engineering +12

Graphene nano-ribbon field-effect transistors as future low-power devices

Yingyu Chen, Amit Sangai, Morteza Gholipour et al. · 2013 · 36 citations

Low-power Electronics, Graphene Nanomeshes, Electrical Engineering +12

Highly accurate SPICE-compatible modeling for single- and double-gate GNRFETs with studies on technology scaling

Morteza Gholipour, Yingyu Chen, Amit Sangai et al. · Design, Automation & Test in Europe Conference & Exhibition (DATE), 2014 · 2014 · 32 citations

Engineering, Power Electronics, Accurate Approximations +19