M. Restle

Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery

Carsten Ronning, Michael Dalmer, M. Uhrmacher et al. · Journal of Applied Physics · 2000 · 54 citations

Materials Science, Defect Recovery, Room Temperature +14

Lattice sites of ion implanted Li in diamond

M. Restle, K. Bharuth‐Ram, H. Quintel et al. · Applied Physics Letters · 1995 · 41 citations · Full text

Materials Science, Materials Engineering, Ion Implantation +15

Emission channeling study of annealing of radiation damage in heavy-ion implanted diamond

H. Quintel, K. Bharuth‐Ram, M. Restle et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1996 · 31 citations

Diamond-like Carbon, Ion Implantation, Engineering +5

Substitutional phosphorus doping of diamond by ion implantation

Michael Dalmer, M. Restle, Carsten Ronning · Journal of Applied Physics · 1997 · 27 citations

Materials Engineering, Materials Science, Diamond-like Carbon +8

Recovery of Structural Defects in GaN After Heavy Ion Implantation

C. Running, Michael Dalmer, M. Deicher et al. · MRS Proceedings · 1997 · 26 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +5