Jiajiang Lv

GaN-based flip-chip LEDs with highly reflective ITO/DBR p-type and via hole-based n-type contacts for enhanced current spreading and light extraction

Shengjun Zhou, Chenju Zheng, Jiajiang Lv et al. · Optics & Laser Technology · 2017 · 49 citations

Electrical Engineering, Enhanced Current Spreading, Engineering +8

Reflectance bandwidth and efficiency improvement of light-emitting diodes with double-distributed Bragg reflector

Xinghuo Ding, Chengqun Gui, Hongpo Hu et al. · Applied Optics · 2017 · 36 citations

Reverse leakage current characteristics of InGaN/GaN multiple quantum well ultraviolet/blue/green light-emitting diodes

Shengjun Zhou, Jiajiang Lv, Yini Wu et al. · Japanese Journal of Applied Physics · 2018 · 28 citations

Wide-bandgap Semiconductor, Ultraviolet/blue/green Light-emitting Diodes, Engineering +16

High power InGaN/GaN flip-chip LEDs with via-hole-based two-level metallization electrodes

Jiajiang Lv, Chenju Zheng, Quan Chen et al. · physica status solidi (a) · 2016 · 23 citations

Materials Science, Electrical Engineering, Solid-state Lighting +14

Highly efficient and reliable high power InGaN/GaN LEDs with 3D patterned step‐like ITO and wavy sidewalls

Jiajiang Lv, Chenju Zheng, Shengjun Zhou et al. · physica status solidi (a) · 2015 · 22 citations

Engineering, High Power Leds, Wavy Sidewalls +18