P. Kazimierski

Transition from Amorphous Semiconductor to Amorphous Insulator in Hydrogenated Carbon−Germanium Films Investigated by Raman Spectroscopy

P. Kazimierski, J. Tyczkowski, Marcin Kozanecki et al. · Chemistry of Materials · 2002 · 48 citations

Engineering, Solid-state Chemistry, Chemistry +20

Correlations between process parameters, chemical structure and electronic properties of amorphous hydrogenated GexC1−x films prepared by plasma-enhanced chemical vapour deposition in a three-electrode reactor

J. Tyczkowski, P. Kazimierski, H. Szymanowski · Thin Solid Films · 1994 · 29 citations

Materials Science, Chemical Engineering, Gexc1−x Films +11

An amorphous dielectric-to-amorphous semiconductor transition in hydrogenated carbon-germanium films

J. Tyczkowski, P. Kazimierski · Journal of Physics D Applied Physics · 1994 · 27 citations

Engineering, Electronic Properties, Plasma Processing +16

Electronic properties of plasma-deposited films prepared from tetramethylsilane

J. Tyczkowski, Ewa Odrobina, P. Kazimierski et al. · Thin Solid Films · 1992 · 24 citations

Materials Science, Engineering, Applied Physics +4

Dielectric and semiconducting Ge-C and Si-C thin films prepared by plasma deposition from organic compounds

J. Tyczkowski, P. Kazimierski, Ewa Odrobina · Surface and Coatings Technology · 1993 · 14 citations

Materials Science, Plasma Deposition, Engineering +11