Statistics
Publications
6
Citations
170
H-Index
6
Active since
2002
Affiliations
T. Agne is an author at Saarland University specializing in materials science, natural sciences, and semiconductor materials.
Publications per year
2002–2007
6
6
Defect-related local magnetism at dilute Fe atoms in ion-implanted ZnO
G. Weyer, H. P. Gunnlaugsson, R. Mantovan et al. · Journal of Applied Physics · 2007 · 59 citations
Doping of the nanocrystalline semiconductor zinc oxide with the donor indium
T. Agne, Z. Guan, X. M. Li et al. · Applied Physics Letters · 2003 · 54 citations
Natural Sciences, Materials Engineering, Materials Science +17
Lattice sites of implanted Cu and Ag in ZnO
E. Rita, J. G. Correia, T. Agne et al. · Superlattices and Microstructures · 2005 · 22 citations
Natural Sciences, Materials Engineering, Materials Science +9
Optical properties of the isoelectronic trap Hg in ZnO
T. Agne, M. Dietrich, J. Hamann et al. · Applied Physics Letters · 2003 · 12 citations
Incorporation of the Donor Indium in Nanocrystalline ZnO
T. Agne, Z. Guan, Xingzhi Li et al. · physica status solidi (b) · 2002 · 12 citations
Natural Sciences, Materials Engineering, Materials Science +17
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