Concepedia

R. W. Fathauer

RW

Statistics

Publications

30

Citations

1.7K

H-Index

21

Active since

1984

Affiliations

Jet Propulsion Laboratory(Current)

Space Micro (United States)

General Electric (United States)

University at Albany, State University of New York

California Institute of Technology

R. W. Fathauer is an author at Jet Propulsion Laboratory specializing in engineering, applied physics, and materials science.

Top concepts

EngineeringApplied PhysicsMaterial SciencePhysicsSurface ScienceSemiconductorsCrystalline DefectsOptoelectronicsMaterials EngineeringThin Films

Publications per year

1984–1993

30

Publications

30

Visible luminescence from silicon wafers subjected to stain etches

R. W. Fathauer, T. George, A. Ksendzov et al. · Applied Physics Letters · 1992 · 238 citations

Materials Science, Luminescence Spectra, Chemical Engineering +14

Electronic structure of light-emitting porous Si

R. P. Vasquez, R. W. Fathauer, T. George et al. · Applied Physics Letters · 1992 · 198 citations

Materials Engineering, Materials Science, Si 2P +14

Epitaxial growth and characterization of CaF2 on Si

L. J. Schowalter, R. W. Fathauer, Raymond P. Goehner et al. · Journal of Applied Physics · 1985 · 150 citations

Materials Science, Materials Engineering, Ionic Fluorite Crystal +14

Growth and characterization of single crystal insulators on silicon

L. J. Schowalter, R. W. Fathauer · Critical reviews in solid state and materials sciences/CRC critical reviews in solid state and materials sciences · 1989 · 121 citations

Semiconductors, Electrical Engineering, Engineering +14

Hydrogen-terminated silicon substrates for low-temperature molecular beam epitaxy

P. J. Grunthaner, F. J. Grunthaner, R. W. Fathauer et al. · Thin Solid Films · 1989 · 111 citations

Materials Science, Hydrogen-terminated Silicon Substrates, Engineering +4

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