Duo Zhao

Role of edge dislocations in enhancing the yellow luminescence of n-type GaN

Duo Zhao, Denghui Jiang, Hui Yang et al. · Applied Physics Letters · 2006 · 88 citations

Materials Science, Wide-bandgap Semiconductor, Semiconductor Technology +10

Thermal annealing behaviour of Pt on n-GaN Schottky contacts

Jun Wang, Duo Zhao, Yuan Sun et al. · Journal of Physics D Applied Physics · 2003 · 56 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +13

Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films

Duo Zhao, Denghui Jiang, Jia-Ji Zhu et al. · Applied Physics Letters · 2009 · 44 citations

Materials Science, Wide-bandgap Semiconductor, Engineering +11

Effects of edge dislocations and intentional Si doping on the electron mobility of n-type GaN films

Duo Zhao, Hui Yang, Jia-Ji Zhu et al. · Applied Physics Letters · 2006 · 44 citations

Materials Science, Semiconductors, Electrical Engineering +13

Flexoelectricity‐Enhanced Self‐Powered Photodetection in 2D van der Waals Heterojunctions With Large Curvatures

Lu Qi, Wei Tang, Xiaoliang Weng et al. · Advanced Functional Materials · 2024 · 33 citations · Full text

Nanosheet, Engineering, Two-dimensional Materials +20