Mohamed Helmi Hadj Alouane

Investigation of the InAs/GaAs Quantum Dots’ Size: Dependence on the Strain Reducing Layer’s Position

Manel Souaf, M. Baïra, Olfa Nasr et al. · Materials · 2015 · 32 citations · Full text

Wurtzite InP/InAs/InP core–shell nanowires emitting at telecommunication wavelengths on Si substrate

Mohamed Helmi Hadj Alouane, Roman Anufriev, Nicolas Chauvin et al. · Nanotechnology · 2011 · 28 citations

Si Substrate, Optical Materials, Engineering +19

Excitonic properties of wurtzite InP nanowires grown on silicon substrate

Mohamed Helmi Hadj Alouane, Nicolas Chauvin, Hammadi Khmissi et al. · Nanotechnology · 2012 · 26 citations

Materials Science, Ii-vi Semiconductor, Wz Inp +14

Comprehensive investigation of optical and electronic properties of tunable InAs QDs optically active at O-band telecommunication window with (In)GaAs surrounding material

Olfa Nasr, Mohamed Helmi Hadj Alouane, H. Mâaref et al. · Journal of Luminescence · 2013 · 25 citations

Photonics, Electrical Engineering, Optical Materials +11

Growth temperature dependence of exciton lifetime in wurtzite InP nanowires grown on silicon substrates

Nicolas Chauvin, Mohamed Helmi Hadj Alouane, Roman Anufriev et al. · Applied Physics Letters · 2012 · 24 citations

Semiconductors, Materials Science, Growth Temperature Dependence +12