Wassim Hamouda

Physical chemistry of the TiN/Hf0.5Zr0.5O2 interface

Wassim Hamouda, A. Pancotti, C. Lubin et al. · Journal of Applied Physics · 2020 · 162 citations

Materials Science, Oxygen Vacancy, Non-volatile Memory +14

The Electrode‐Ferroelectric Interface as the Primary Constraint on Endurance and Retention in HZO‐Based Ferroelectric Capacitors

Ruben Alcala, Monica Materano, Patrick D. Lomenzo et al. · Advanced Functional Materials · 2023 · 87 citations · Full text

Dielectrics, Engineering, Electrode-electrolyte Interface +18

Interface chemistry of pristine TiN/La:Hf0.5Zr0.5O2 capacitors

Wassim Hamouda, C. Lubin, Shigenori Ueda et al. · Applied Physics Letters · 2020 · 42 citations

Oxygen Vacancy, Interface Chemistry, Engineering +10

Oxygen vacancy concentration as a function of cycling and polarization state in TiN/Hf0.5Zr0.5O2/TiN ferroelectric capacitors studied by x-ray photoemission electron microscopy

Wassim Hamouda, Furqan Mehmood, Thomas Mikolajick et al. · Applied Physics Letters · 2022 · 40 citations

Materials Science, Oxygen Vacancy, Chemical Engineering +15

Electronic Synapses Enabled by an Epitaxial SrTiO_3‐δ / Hf_0.5Z_r0.5O₂ Ferroelectric Field‐Effect Memristor Integrated on Silicon

Nikitas Siannas, Christina Zacharaki, Polychronis Tsipas et al. · Advanced Functional Materials · 2023 · 24 citations · Full text

Engineering, Emerging Memory Technology, Ferroelectric Random-access Memory +19