B. R. Trenhaile

Electron-stimulated desorption from an unexpected source: Internal hot electrons for Br–Si(100)-(2×1)

B. R. Trenhaile, V. N. Antonov, G. J. Xu et al. · Surface Science · 2005 · 33 citations

Natural Sciences, Materials Science, Physics +10

Oxygen atoms on Si(100)-(2×1): Imaging with scanning tunneling microscopy

B. R. Trenhaile, Abhishek Agrawal, J. H. Weaver · Applied Physics Letters · 2006 · 21 citations

Natural Sciences, Chemistry, Materials Science +17

Halogen chemisorption, the pairwise diffusion of I, and trapping by defects on Si(100)

G. J. Xu, A. W. Signor, Abhishek Agrawal et al. · Surface Science · 2005 · 17 citations

Natural Sciences, Chemistry, Physics +14

Equilibrium morphologies for Cl-roughened Si(100) at 700–750 K: Dependence on Cl concentration

G. J. Xu, Koji S. Nakayama, B. R. Trenhaile et al. · Physical review. B, Condensed matter · 2003 · 17 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Crossover energetics for halogenated Si(100): Vacancy line defects, dimer vacancy lines, and atom vacancy lines

G. J. Xu, Nikolai A. Zarkevich, Abhishek Agrawal et al. · Physical Review B · 2005 · 14 citations

Natural Sciences, Materials Science, Physics +17