Statistics
Publications
8
Citations
532
H-Index
8
Active since
2011
Affiliations
Samsung (South Korea)(Current)
In-Mo Kim is an author at Samsung (South Korea) specializing in device scaling, semiconductor devices, and nand flash memory.
Publications per year
2011–2025
8
8
A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate
Woopyo Jeong, Jae-Woo Im, Doo-Hyun Kim et al. · IEEE Journal of Solid-State Circuits · 2015 · 98 citations
11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memory
Chulbum Kim, Ji-Ho Cho, Woopyo Jeong et al. · 2017 · 86 citations
7.1 256Gb 3b/cell V-NAND flash memory with 48 stacked WL layers
Dongku Kang, Woopyo Jeong, Chulbum Kim et al. · 2016 · 84 citations
Engineering, Computer Engineering, Electrical Engineering +17
7.2 A 128Gb 3b/cell V-NAND flash memory with 1Gb/s I/O rate
Jae-Woo Im, Woopyo Jeong, Doo-Hyun Kim et al. · 2015 · 83 citations
Engineering, Computer Engineering, Electrical Engineering +14
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