Julien Jussot

Ultra-scaled MOCVD MoS₂ MOSFETs with 42nm contact pitch and 250µA/µm drain current

Quentin Smets, Goutham Arutchelvan, Julien Jussot et al. · 2019 · 84 citations

Engineering, Electrical Engineering, Materials Science +17

Impact of device scaling on the electrical properties of MoS2 field-effect transistors

Goutham Arutchelvan, Quentin Smets, Devin Verreck et al. · Scientific Reports · 2021 · 77 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Path toward manufacturable superconducting qubits with relaxation times exceeding 0.1 ms

Jeroen Verjauw, R. Acharya, Jacques Van Damme et al. · npj Quantum Information · 2022 · 44 citations · Full text

Computing, Electrical Engineering, Physics +17

A flexible 300 mm integrated Si MOS platform for electron- and hole-spin qubits exploration

Ruoyu Li, Nard Dumoulin Stuyck, Stefan Kubicek et al. · 2020 · 33 citations

Engineering, Electrical Engineering, Microelectronics +16

Industry-compatible silicon spin-qubit unit cells exceeding 99% fidelity

Paul Steinacker, Nard Dumoulin Stuyck, Wee Han Lim et al. · Nature · 2025 · 29 citations · Full text

Computing, Computer Science, Physics +16