J. Brown

Linearity characteristics of microwave-power GaN HEMTs

W. Nagy, J. Brown, R. Borges et al. · IEEE Transactions on Microwave Theory and Techniques · 2003 · 54 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

150 W GaN-on-Si RF Power Transistor

W. Nagy, Sameer Singhal, R. Borges et al. · IEEE MTT-S International Microwave Symposium Digest, 2005. · 2005 · 50 citations

Electrical Engineering, Dpd Linearizer, Engineering +10

A 10-GW Pulsed Power Supply for HPM Sources

B.M. Novac, Majda Černič Istenič, Jing Luo et al. · IEEE Transactions on Plasma Science · 2006 · 38 citations

Electrical Engineering, Engineering, Radio Frequency +10

Material, process, and device development of GaN-based HFETs on silicon substrates

J. W. Johnson, Ji‐Xing Gao, K. Lucht et al. · 2004 · 34 citations

Wide-bandgap Semiconductor, Engineering, Gan Growth +16

Fast and accurate two-dimensional modelling of high-current, high-voltage air-cored transformers

Jing Luo, B.M. Novac, I.R. Smith et al. · Journal of Physics D Applied Physics · 2005 · 28 citations

Electrical Engineering, Engineering, High Voltage Engineering +8