Manuel Fregolent - Concepedia

Author

Manuel Fregolent

University of Padua ORCID

Also Known As

Fregolent, Manuel, M. Fregolent, Manuel Fregolent

Publications

216

Citations

H-Index

Concepts

All Affiliations

University of Padua National Institute of Information and Communications Technology Ferdinand-Braun-Institut

About

Manuel Fregolent is an author at University of Padua specializing in electrical engineering, engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	5	5	102
2	Applied Physics	5	5	102
3	Electrical Engineering	5	5	102
4	Materials Science	2	2	42
5	Physics	2	2	39

Manuel Fregolent

Publications

158

Citations

H-Index

Page 1

	Year	Citations
Carrier capture kinetics, deep levels, and isolation properties of <b> <i>β</i> </b>-Ga2O3 Schottky-barrier diodes damaged by nitrogen implantation Carlo De Santi, Manuel Fregolent, Matteo Buffolo, Applied Physics Letters Materials ScienceSemiconductor TechnologyElectrical EngineeringElectronic DevicesCarrier Capture Kinetics	2020	29
Modeling the electrical degradation of AlGaN-based UV-C LEDs by combined deep-level optical spectroscopy and TCAD simulations Nicola Roccato, Francesco Piva, Carlo De Santi, Applied Physics Letters EngineeringAlgan-based Uv-c LedsDegradation KineticsAlgan-based Uvc LedsOptical Properties	2023	26
Advanced defect spectroscopy in wide-bandgap semiconductors: review and recent results Manuel Fregolent, Francesco Piva, Matteo Buffolo, Journal of Physics D Applied Physics	2024	24
Logarithmic trapping and detrapping in <b> <i>β</i> </b>-Ga2O3 MOSFETs: Experimental analysis and modeling Manuel Fregolent, Enrico Brusaterra, Carlo De Santi, Applied Physics Letters Device ModelingElectrical EngineeringEngineeringLateral β-Ga2o3 MosfetsStress-induced Leakage Current	2022	21
Deep levels and carrier capture kinetics in n-GaAsBi alloys investigated by deep level transient spectroscopy Manuel Fregolent, Matteo Buffolo, Carlo De Santi, Journal of Physics D Applied Physics	2021	18
Threshold voltage instability in SiO2-gate semi-vertical GaN trench MOSFETs grown on silicon substrate Manuel Fregolent, Andrea Del Fiol, Carlo De Santi, Microelectronics Reliability	2023	14
Impact of thermal annealing on deep levels in nitrogen-implanted β-Ga2O3 Schottky barrier diodes Manuel Fregolent, Carlo De Santi, Matteo Buffolo, Journal of Applied Physics Materials ScienceSemiconductorsElectrical EngineeringSemiconductor TechnologyEngineering	2021	13
Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs Nicola Modolo, Manuel Fregolent, F. Masin, Microelectronics Reliability Wide-bandgap SemiconductorElectrical EngineeringEngineeringPhysicsApplied Physics	2022	13

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