Concepedia

Author

Gwang Hyuk Shin

Korea Advanced Institute of Science and Technology

Also Known As

Gwang Hyuk Shin, Jae Hur

40

Publications

832

Citations

13

H-Index

24

Concepts

All Affiliations

Korea Advanced Institute of Science and TechnologySamsung (South Korea)
GH

About

Gwang Hyuk Shin is an author at Korea Advanced Institute of Science and Technology specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

5

5

259

2

Applied Physics

5

5

259

3

Electrical Engineering

4

4

207

4

Materials Science

2

2

140

5

Chemistry

1

1

52

Gwang Hyuk Shin

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14

Publications

798

Citations

13

H-Index

YearCitations

Ultrasensitive Phototransistor Based on WSe<sub>2</sub>–MoS<sub>2</sub> van der Waals Heterojunction

Gwang Hyuk Shin, Cheolmin Park, Khang June Lee,

Nano Letters

2020

201

Multilevel resistive switching nonvolatile memory based on MoS <sub>2</sub> nanosheet-embedded graphene oxide

Gwang Hyuk Shin, Choong‐Ki Kim, Gyeong Sook Bang,

2D Materials

2016

88

Si–MoS<sub>2</sub> Vertical Heterojunction for a Photodetector with High Responsivity and Low Noise Equivalent Power

Gwang Hyuk Shin, Junghoon Park, Khang June Lee,

ACS Applied Materials & Interfaces

2019

80

Vertical-Tunnel Field-Effect Transistor Based on a Silicon–MoS<sub>2</sub> Three-Dimensional–Two-Dimensional Heterostructure

Gwang Hyuk Shin, Bondae Koo, Hamin Park,

ACS Applied Materials & Interfaces

2018

55

Pyridinic-N-Doped Graphene Paper from Perforated Graphene Oxide for Efficient Oxygen Reduction

Gyeong Sook Bang, Gi Woong Shim, Gwang Hyuk Shin,

ACS Omega

2018

53

Low‐Power Nonvolatile Charge Storage Memory Based on MoS<sub>2</sub> and an Ultrathin Polymer Tunneling Dielectric

Myung Hun Woo, Byung Chul Jang, Junhwan Choi,

Advanced Functional Materials

2017

52

Ultrasensitive WSe<sub>2</sub>/α‐In<sub>2</sub>Se<sub>3</sub> NIR Photodetector Based on Ferroelectric Gating Effect

Hyeok Jun Jin, Cheolmin Park, Khang June Lee,

Advanced Materials Technologies

2021

49

Photoconductivity Switching in MoTe<sub>2</sub>/Graphene Heterostructure by Trap-Assisted Photogating

Ho Jin Kim, Khang June Lee, Junghoon Park,

ACS Applied Materials & Interfaces

2020

47

Vertical-tunneling field-effect transistor based on MoTe<sub>2</sub>/MoS<sub>2</sub>2D–2D heterojunction

Bondae Koo, Gwang Hyuk Shin, Hamin Park,

Journal of Physics D Applied Physics

2018

38

High-Performance Field-Effect Transistor and Logic Gates Based on GaS–MoS<sub>2</sub> van der Waals Heterostructure

Gwang Hyuk Shin, Geon‐Beom Lee, Eun‐Su An,

ACS Applied Materials & Interfaces

2020

32

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