Johannes K. Zettler - Concepedia

Author

Johannes K. Zettler

Paul Drude Institute for Solid State Electronics ORCID

Also Known As

J. K. Zettler, Johannes K Zettler, Johannes K. Zettler, Zettler, Johannes, Zettler, Johannes Kristian

Publications

365

Citations

H-Index

Concepts

All Affiliations

Paul Drude Institute for Solid State Electronics

About

Johannes K. Zettler is an author at Paul Drude Institute for Solid State Electronics specializing in applied physics, engineering, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	3	3	83
2	Applied Physics	3	3	83
3	Physics	3	3	83
4	Electrical Engineering	1	1	31
5	Condensed Matter Physics	1	1	37

Johannes K. Zettler

Publications

334

Citations

H-Index

Page 1

	Year	Citations
Observation of Dielectrically Confined Excitons in Ultrathin GaN Nanowires up to Room Temperature Johannes K. Zettler, Pierre Corfdir, Christian Hauswald, Nano Letters	2015	84
Monitoring the Formation of Nanowires by Line-of-Sight Quadrupole Mass Spectrometry: A Comprehensive Description of the Temporal Evolution of GaN Nanowire Ensembles Sergio Fernández‐Garrido, Johannes K. Zettler, Lutz Geelhaar, Nano Letters	2015	60
Stacking faults as quantum wells in nanowires: Density of states, oscillator strength, and radiative efficiency Pierre Corfdir, Christian Hauswald, Johannes K. Zettler, Physical Review B	2014	48
High-Temperature Growth of GaN Nanowires by Molecular Beam Epitaxy: Toward the Material Quality of Bulk GaN Johannes K. Zettler, Christian Hauswald, Pierre Corfdir, Crystal Growth & Design	2015	40
Origin of the nonradiative decay of bound excitons in GaN nanowires Christian Hauswald, Pierre Corfdir, Johannes K. Zettler, Physical Review B Wide-bandgap SemiconductorNonradiative DecayEngineeringGan Nanowire EnsemblesSemiconductors	2014	37
Sub-meV linewidth in GaN nanowire ensembles: Absence of surface excitons due to the field ionization of donors Pierre Corfdir, Johannes K. Zettler, Christian Hauswald, Physical Review B Wide-bandgap SemiconductorEngineeringGan Nanowire EnsemblesSurface Electric FieldSemiconductor Nanostructures	2014	31
Importance of the dielectric contrast for the polarization of excitonic transitions in single GaN nanowires Pierre Corfdir, Felix Feix, Johannes K. Zettler, New Journal of Physics	2015	19
Nature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si(111) Carsten Pfüller, Pierre Corfdir, Christian Hauswald, Physical review. B./Physical review. B 3.45-Ev Luminescence LinesPhotoluminescenceEngineeringPhysicsNanotechnology	2016	15

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