J. P. Chané

Mach-Zehnder modulators and optical switches on III-V semiconductors

M. Erman, P. Jarry, R. Gamonal et al. · Journal of Lightwave Technology · 1988 · 20 citations

Optical Materials, Engineering, Optoelectronic Devices +16

InGaAs/Si3N4 interface obtained in ultrahigh vacuum multipolar plasma: In-situ control by ellipsometry and electrical characterization

Pierre Boher, M. Renaud, J.M. López-Villegas et al. · Applied Surface Science · 1987 · 19 citations

In-situ Control, Electrical Engineering, Plasma Electronics +12

Some characteristics of highly N-doped VPE grown GaAs epilayers

L. Hollan, M. Boulou, J. P. Chané · Journal of Electronic Materials · 1981 · 15 citations

Electrical Engineering, Engineering, Applied Physics +3

Device Quality GaAs Grown at Low Temperature by the Halide Process

J. Hallais, D. Boccon‐Gibod, J. P. Chané et al. · Journal of The Electrochemical Society · 1977 · 13 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +15