K. B. Lee

Optical investigation of exciton localization in AlxGa1−xN

K. B. Lee, P. J. Parbrook, Tao Wang et al. · Journal of Applied Physics · 2007 · 35 citations

Natural Sciences, Materials Engineering, Materials Science +16

The origin of the high ideality factor in AlGaN-based quantum well ultraviolet light emitting diodes

K. B. Lee, P. J. Parbrook, Ti Wang et al. · physica status solidi (b) · 2010 · 29 citations

Engineering, Electrical Engineering, Materials Science +14

Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by <i>in-situ</i> fluorine doping of atomic layer deposition Al2O3 gate dielectrics

Joseph W. Roberts, Paul R. Chalker, K. B. Lee et al. · Applied Physics Letters · 2016 · 19 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs

Zaffar H. Zaidi, K. B. Lee, Joseph W. Roberts et al. · Journal of Applied Physics · 2018 · 11 citations

Engineering, Electrical Engineering, Materials Science +17