21:I[432972,["/_next/static/chunks/bb923814e1f4d2e9.js","/_next/static/chunks/dd3ee9f5b7716ca6.js","/_next/static/chunks/4204a0ae82542ca8.js","/_next/static/chunks/1270dead247da766.js","/_next/static/chunks/6e1aa89a642f40be.js","/_next/static/chunks/2d7aa753e81324a8.js","/_next/static/chunks/8ffd0b71567920d8.js","/_next/static/chunks/67ea6dfd21f16c5f.js","/_next/static/chunks/24eb4379f68013fd.js","/_next/static/chunks/b8cd775ffdf935bd.js","/_next/static/chunks/983103cd9eb7b428.js","/_next/static/chunks/263f2cdcb9aa2341.js","/_next/static/chunks/294b9525248c8e5f.js"],"default"] 22:T52f,This paper demonstrates two variations of Temperature compensated (TempCo) FBAR resonators with high Kt ² . One 1.5 GHz non-symmetric stack design TempCo FBAR resonator has a Kt ² of 4.28% and linear TCF of 0 ppm/°C. A second, quasi-symmetric stack design 1.5GHz TempCo FBAR resonator has Kt ² as high as 5.6% and linear TCF of -6 ppm/°C. Significant Kt ² improvement comes from optimal design of stack film, interposer electrode effect and novel process development of a sealant for the oxide to protect it from HF etching. This paper also discusses the trade-off between two parameters (linear TCF vs. Kt ² ). High Kt ² TempCo FBAR resonator is ideal for FBAR oscillator application with wide frequency pulling range.

#	Concept	H-Index	Publications	Citations
1	Engineering	1	1	28
2	Applied Physics	1	1	28
3	Electrical Engineering	1	1	28
4	Physics	1	1	28
5	Microelectronics	1	1	28

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