X. J. Pei

White light-emitting diodes based on a single InGaN emission layer

X. H. Wang, Haiqiang Jia, L. W. Guo et al. · Applied Physics Letters · 2007 · 59 citations

Engineering, Luminescence Property, Nanoelectronics +16

Frequency upconversion of Tm3+ and Yb3+ codoped YLiF4 synthesized by hydrothermal method

X. J. Pei, Yanbing Hou, Suling Zhao et al. · Materials Chemistry and Physics · 2005 · 43 citations

Chemistry, Frequency Upconversion, Hydrothermal Method

Control performance of a single-chip white light emitting diode by adjusting strain in InGaN underlying layer

X. H. Wang, L. W. Guo, Haiqiang Jia et al. · Applied Physics Letters · 2009 · 41 citations

Engineering, Control Performance, Light-emitting Diodes +17

Effects of barrier growth temperature ramp-up time on the photoluminescence of InGaN∕GaN quantum wells

Y. Wang, X. J. Pei, Zhiwei Xing et al. · Journal of Applied Physics · 2007 · 36 citations

Optical Materials, Engineering, Optoelectronic Devices +22

Anomalous tunneling effect on photoluminescence of asymmetric coupled double InGaN∕GaN quantum wells

Y. Wang, X. J. Pei, Zhiwei Xing et al. · Applied Physics Letters · 2007 · 23 citations

Categoryquantum Electronics, Engineering, Varied Excitation Density +17