Mohammad Fallahnejad

Impact of channel doping engineering on the high-frequency noise performance of junctionless In0.3Ga0.7As/GaAs FET: A numerical simulation study

Mohammad Fallahnejad, Mahdi Vadizadeh, Alireza Salehi et al. · Physica E Low-dimensional Systems and Nanostructures · 2019 · 22 citations

Engineering, Electrical Engineering, Materials Science +16

Improving subthreshold slope in Si/InAs/Ge junctionless tunneling FET-based biosensor by using asymmetric gate oxide thickness for low-power applications: A numerical simulation study

Mahdi Vadizadeh, Mohammad Fallahnejad, Pegah Sotoodeh et al. · Materials Science and Engineering B · 2023 · 18 citations

Engineering, Electrical Engineering, Materials Science +17

Double Gate Double-Channel AlGaN/GaN MOS HEMT and its Applications to LNA with Sub-1 dB Noise Figure

Mahdi Vadizadeh, Mohammad Fallahnejad, Maryam Shaveisi et al. · Silicon · 2022 · 17 citations

Engineering, Electrical Engineering, Materials Science +12

High-speed SOI junctionless transistor based on hybrid heterostructure of Si/Si0.5Ge0.5 and asymmetric spacers with outstanding analog/RF parameters

Mohammad Fallahnejad, Amir Amini, Amir Khodabakhsh et al. · Applied Physics A · 2021 · 16 citations

Engineering, Electrical Engineering, Materials Science +14

Performance enhancement of field effect transistor without doping junctions using In0.3Ga0.7As/GaAs for analog/RF applications

Mohammad Fallahnejad, Mahdi Vadizadeh, Alireza Salehi · International Journal of Modern Physics B · 2019 · 14 citations

Engineering, Electrical Engineering, Materials Science +17