M. Gerling

Properties of thin strained layers of GaAs grown on InP

Mats‐Erik Pistol, M. Gerling, Dan Hessman et al. · Physical review. B, Condensed matter · 1992 · 32 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +17

Donor states in GaAs under hydrostatic pressure

X. Liu, Lars Samuelson, Mats‐Erik Pistol et al. · Physical review. B, Condensed matter · 1990 · 18 citations

Semiconductors, Ii-vi Semiconductor, Gaas Crystals +15

Validation of a 3-D Finite Element Human Fingerpad Model Composed of Anatomically Accurate Tissue Layers

Matt B. Wagner, M. Gerling, Jacob R. Scanlon · 2008 · 17 citations

Haptic Feedback, Engineering, Dexterous Manipulation +24

Direct type II–indirect type I conversion of InP/GaAs/InP strained quantum wells induced by hydrostatic pressure

M. Gerling, Mats‐Erik Pistol, Lars Samuelson et al. · Applied Physics Letters · 1991 · 13 citations

Wide-bandgap Semiconductor, Ii-vi Semiconductor, Electrical Engineering +15

Dislocations in mismatched layers of GaAs<i>x</i>P1−<i>x</i> in between GaP as observed by low-temperature cathodoluminescence: Part I. Grown on (001) oriented substrates.

Anders Gustafsson, Mats‐Erik Pistol, M. Gerling et al. · Journal of Applied Physics · 1991 · 10 citations

Semiconductors, Materials Science, Layer Thickness +14