Myeong Gu Yun

Low voltage-driven oxide phototransistors with fast recovery, high signal-to-noise ratio, and high responsivity fabricated via a simple defect-generating process

Myeong Gu Yun, Ye Kyun Kim, Cheol Hyoun Ahn et al. · Scientific Reports · 2016 · 58 citations · Full text

Effects of channel thickness on electrical properties and stability of zinc tin oxide thin-film transistors

Myeong Gu Yun, Sohee Kim, Cheol Hyoun Ahn et al. · Journal of Physics D Applied Physics · 2013 · 39 citations

Engineering, Channel Thickness, Pbs Instability +16

Bi-layer channel structure-based oxide thin-film transistors consisting of ZnO and Al-doped ZnO with different Al compositions and stacking sequences

Myeong Gu Yun, Cheol Hyoun Ahn, Sohee Kim et al. · Electronic Materials Letters · 2015 · 39 citations

Materials Science, Electrical Engineering, Bi-layer Channel +6

Dual Electrical Behavior of Multivalent Metal Cation-Based Oxide and Its Application to Thin-Film Transistors with High Mobility and Excellent Photobias Stability

Myeong Gu Yun, Cheol Hyoun Ahn, Sohee Kim et al. · ACS Applied Materials & Interfaces · 2015 · 28 citations

Anomalous tin chemical bonding in indium-zinc-tin oxide films and their thin film transistor performance

Sohee Kim, Cheol Hyoun Ahn, Myeong Gu Yun et al. · Journal of Physics D Applied Physics · 2014 · 26 citations

Engineering, Thin Film Process Technology, Semiconductors +16