Donghyuk Park

7.1 A 1/4-inch 8Mpixel CMOS image sensor with 3D backside-illuminated 1.12μm pixel with front-side deep-trench isolation and vertical transfer gate

JungChak Ahn, Kyungho Lee, Yitae Kim et al. · 2014 · 53 citations

Photonics, Vertical Transfer Gate, Engineering +15

7.9 1/2.74-inch 32Mpixel-Prototype CMOS Image Sensor with 0.64_μ m Unit Pixels Separated by Full-Depth Deep-Trench Isolation

JongEun Park, Sungbong Park, Kwansik Cho et al. · 2021 · 30 citations

Image Sensor, Engineering, Image Processor +13

A 0.8 µm Smart Dual Conversion Gain Pixel for 64 Megapixels CMOS Image Sensor with 12k e- Full-Well Capacitance and Low Dark Noise

Donghyuk Park · 2019 · 29 citations

Low Dark Noise, Deep Trench Isolation, Data Converter +5

A 1/2.8-inch 24Mpixel CMOS image sensor with 0.9μm unit pixels separated by full-depth deep-trench isolation

Yitae Kim, Won-Chul Choi, Donghyuk Park et al. · 2018 · 27 citations

Engineering, 1/2.8-Inch 24Mpixel, Mixed-signal Integrated Circuit +13

A 0.8 μm Nonacell for 108 Megapixels CMOS Image Sensor with FD-Shared Dual Conversion Gain and 18,000e- Full-Well Capacitance

Youngsun Oh, Munhwan Kim, Won-Chul Choi et al. · 2020 · 15 citations

μM Nonacell, 0.8μM-pitch 108, Image Processor +6