V. V. Bogoboyashchyy

Publications

151

Citations

H-Index

2003

Active since

Affiliations

Kremenchuk University of Economics Information Technology and Management(Current)

Physico-Technical Institute

Institute of Physics

V. V. Bogoboyashchyy is an author at Kremenchuk University of Economics Information Technology and Management specializing in applied physics, materials science, and engineering.

ORCID

Top concepts

EngineeringApplied PhysicsMaterial ScienceElectrical EngineeringSemiconductorsMicroelectronicsCondensed Matter PhysicsCrystalline DefectsMaterials EngineeringPhysics

Publications per year

2003–2007

Publications

Conversion of conductivity type in Cu-doped Hg<sub>0.8</sub>Cd<sub>0.2</sub>Te crystals under ion beam milling

V. V. Bogoboyashchyy, A. I. Elizarov · Semiconductor Science and Technology · 2005 · 39 citations

Materials Science, Semiconductors, Electrical Engineering +11

Time relaxation of point defects in p- and n-(HgCd)Te after ion milling

E. Belas, V. V. Bogoboyashchyy, R. Grill et al. · Journal of Electronic Materials · 2003 · 36 citations

Materials Science, Ion Implantation, Point Defects +11

The nature of the compositional dependence of p–n junction depth in ion-milled p-HgCdTe

V. V. Bogoboyashchyy, K. D. Mynbaev · Semiconductor Science and Technology · 2005 · 17 citations

Semiconductors, Materials Engineering, Electrical Engineering +15

Electrical characteristics relaxation of ion milled MCT layers

V. V. Bogoboyashchyy · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2005 · 16 citations

Relaxation Process, Engineering, Solid-state Chemistry +19

Relaxation of electrical properties of n-type layers formed by ion milling in epitaxial HgCdTe doped with V-group acceptors

V. V. Bogoboyashchyy, K. D. Mynbaev, M. Pociask · Semiconductor Science and Technology · 2006 · 16 citations

Materials Science, Donor Complexes, Electrical Engineering +15

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