S. Narushima

A p‐Type Amorphous Oxide Semiconductor and Room Temperature Fabrication of Amorphous Oxide p–n Heterojunction Diodes

S. Narushima, Hiroshi Mizoguchi, Ken‐ichi Shimizu et al. · Advanced Materials · 2003 · 162 citations

Engineering, Materials Engineering, Materials Science +17

Amorphous transparent conductive oxide InGaO₃(ZnO)_m (m≤ 4): a Zn4s conductor

Masahiro Orita, Hiromichi Ohta, Masahiro Hirano et al. · Philosophical Magazine B · 2001 · 140 citations

Natural Sciences, Materials Science, Physics +17

Fabrication and characterization of heteroepitaxial <i>p-n</i> junction diode composed of wide-gap oxide semiconductors p-ZnRh2O4/n-ZnO

Hiromichi Ohta, Hiroshi Mizoguchi, Masahiro Hirano et al. · Applied Physics Letters · 2003 · 122 citations

Engineering, Materials Engineering, Materials Science +17

Electrical Properties and Structure of p‐Type Amorphous Oxide Semiconductor <b><i>x</i></b>ZnO·Rh₂O₃

Toshio Kamiya, S. Narushima, Hiroshi Mizoguchi et al. · Advanced Functional Materials · 2005 · 63 citations

Natural Sciences, Materials Science, Physics +17

Electronic transport in degenerate amorphous oxide semiconductors

K. Shimakawa, S. Narushima, Hirotsugu HOSONO et al. · Philosophical Magazine Letters · 1999 · 41 citations

Natural Sciences, Materials Science, Physics +17