Tongchuan Ma

Heteroepitaxial growth of thick<i>α</i>-Ga₂O₃film on sapphire (0001) by MIST-CVD technique

Tongchuan Ma, Xuanhu Chen, Fangfang Ren et al. · Journal of Semiconductors · 2019 · 73 citations

Materials Science, Materials Engineering, Epitaxial Growth +13

Identification and modulation of electronic band structures of single-phase β-(AlxGa1−x)2O3 alloys grown by laser molecular beam epitaxy

J. Li, Xuanhu Chen, Tongchuan Ma et al. · Applied Physics Letters · 2018 · 53 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +16

Nanoplasmonically Enhanced High-Performance Metastable Phase α-Ga₂O₃ Solar-Blind Photodetectors

Guang Qiao, Qing Cai, Tongchuan Ma et al. · ACS Applied Materials & Interfaces · 2019 · 42 citations

Phase tailoring and wafer-scale uniform hetero-epitaxy of metastable-phased corundum α-Ga2O3 on sapphire

Jinggang Hao, Tongchuan Ma, X.H. Chen et al. · Applied Surface Science · 2020 · 41 citations

Materials Science, Wafer-scale Uniform Hetero-epitaxy, Engineering +7

Ellipsometric determination of anisotropic optical constants of single phase Ga2O3 thin films in its orthorhombic and monoclinic phases

Minglin Zhao, Rongjing Tong, Xuanhu Chen et al. · Optical Materials · 2020 · 31 citations

Materials Science, Optical Materials, Engineering +11