Concepedia

Y. Pacaud

YP

Statistics

Publications

10

Citations

440

H-Index

10

Active since

1993

Affiliations

Helmholtz-Zentrum Dresden-Rossendorf(Current)

Aristotle University of Thessaloniki

University of the Basque Country

University of East Anglia

Universitat de Barcelona

Y. Pacaud is an author at Helmholtz-Zentrum Dresden-Rossendorf specializing in materials science, materials engineering, and electronic materials.

Publications per year

1993–1998

10

Publications

10

Positron studies of defects in ion-implanted SiC

G. Bräuer, W. Anwand, P. G. Coleman et al. · Physical review. B, Condensed matter · 1996 · 118 citations

, , +17

Analysis of ion beam induced damage and amorphization of 6H-SiC by raman scattering

A. Pérez-Rodrı́guez, Y. Pacaud, L. Calvo‐Barrio et al. · Journal of Electronic Materials · 1996 · 71 citations

, , +12

Ion-beam synthesis of amorphous SiC films: Structural analysis and recrystallization

C. Serre, L. Calvo‐Barrio, A. Pérez-Rodrı́guez et al. · Journal of Applied Physics · 1996 · 52 citations · Full text

, , +17

Spectroscopic studies of BN films deposited by dynamic ion mixing

J.P. Rivière, Y. Pacaud, M. Cahoreau · Thin Solid Films · 1993 · 44 citations

, , +8

Post-implantation annealing of SiC studied by slow-positron spectroscopies

G. Bräuer, W. Anwand, P. G. Coleman et al. · Journal of Physics Condensed Matter · 1998 · 35 citations

, , +16

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