J. Zhang

Step-density variations and reflection high-energy electron-diffraction intensity oscillations during epitaxial growth on vicinal GaAs(001)

T. Shitara, Dimitri D. Vvedensky, Mark Richard Wilby et al. · Physical review. B, Condensed matter · 1992 · 234 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +14

Misorientation dependence of epitaxial growth on vicinal GaAs(001)

T. Shitara, Dimitri D. Vvedensky, Mark Richard Wilby et al. · Physical review. B, Condensed matter · 1992 · 128 citations

Materials Science, Engineering, Physics +11

Arsenic incorporation kinetics in GaAs(001) homoepitaxy revisited

Eng Soon Tok, J.H. Neave, J. Zhang et al. · Surface Science · 1997 · 94 citations

Semiconductors, Engineering, Arsenic Incorporation Kinetics +5

Morphological model of reflection high-energy electron-diffraction intensity oscillations during epitaxial growth on GaAs(001)

T. Shitara, Dimitri D. Vvedensky, Mark Richard Wilby et al. · Applied Physics Letters · 1992 · 62 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +15

Is the arsenic incorporation kinetics important when growing GaAs(001), (110), and (111)A films?

E. S. Tok, T. S. Jones, J.H. Neave et al. · Applied Physics Letters · 1997 · 49 citations

Engineering, Incorporation Coefficients, Chemistry +17