Salah H. Gamal

Publications

164

Citations

H-Index

1990

Active since

Affiliations

Institut National des Sciences Appliquées de Lyon(Current)

Ain Shams University

Centre National de la Recherche Scientifique

Salah H. Gamal is an author at Institut National des Sciences Appliquées de Lyon specializing in engineering, electrical engineering, and microelectronics.

ORCID

Top concepts

EngineeringElectrical EngineeringMicroelectronicsApplied PhysicsNanoelectronicsPower ElectronicsElectrical InsulationPower Electronic DevicesPhysicsGraphene

Publications per year

1990–2016

Publications

State variable modeling of the power pin diode using an explicit approximation of semiconductor device equations: a novel approach

Hervé Morel, Salah H. Gamal, J.P. Chante · IEEE Transactions on Power Electronics · 1994 · 47 citations

Device Modeling, Electrical Engineering, Engineering +12

Planar Edge Schottky Barrier-Tunneling Transistors Using Epitaxial Graphene/SiC Junctions

Jan Kunc, Yike Hu, James Palmer et al. · Nano Letters · 2014 · 28 citations

Graphene Nanomeshes, Electrical Engineering, Engineering +10

Ballistic transport in Schottky barrier carbon nanotube FETs

Mahmoud Ossaimee, Salah H. Gamal, Khaled Kirah et al. · Electronics Letters · 2008 · 28 citations

Gate dielectric constant engineering for suppression of ambipolar conduction in CNTFETs

Mahmoud Ossaimee, Salah H. Gamal, Ahmed Shaker · Electronics Letters · 2015 · 21 citations

Electrical Engineering, Dielectric Constant, Engineering +11

Silicon carbide against silicon: a comparison in terms of physical properties, technology and electrical performance of power devices

M.L. Locatelli, Salah H. Gamal · Journal de Physique III · 1993 · 18 citations · Full text

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