Yunseob Kim

Comparison of trapped charges and hysteresis behavior in hBN encapsulated single MoS ₂ flake based field effect transistors on SiO ₂ and hBN substrates

Changhee Lee, Servin Rathi, Muhammad Atif Khan et al. · Nanotechnology · 2018 · 103 citations

Engineering, Electrical Engineering, Materials Science +17

Clean Interface Contact Using a ZnO Interlayer for Low-Contact-Resistance MoS₂ Transistors

Jisu Jang, Yunseob Kim, Sang‐Soo Chee et al. · ACS Applied Materials & Interfaces · 2019 · 89 citations

Engineering, Materials Engineering, Materials Science +17

Tunable Electron and Hole Injection Enabled by Atomically Thin Tunneling Layer for Improved Contact Resistance and Dual Channel Transport in MoS₂/WSe₂ van der Waals Heterostructure

Muhammad Atif Khan, Servin Rathi, Changhee Lee et al. · ACS Applied Materials & Interfaces · 2018 · 22 citations

Engineering, Materials Engineering, Materials Science +17

Transient Response of h-BN-Encapsulated Graphene Transistors: Signatures of Self-Heating and Hot-Carrier Trapping

Jubin Nathawat, Miao Zhao, Chun-Pui Kwan et al. · ACS Omega · 2019 · 21 citations · Full text

Engineering, Materials Science, Physics +17

Few-layer PdSe2-based field-effect transistor for photodetector applications

A. Venkatesan, Servin Rathi, Yunseob Kim et al. · Materials Science in Semiconductor Processing · 2020 · 10 citations

Engineering, Electrical Engineering, Materials Science +14