Yunxuan Yang

Red InGaN micro-light-emitting diodes (<b>&amp;gt;</b>620 nm) with a peak external quantum efficiency of 4.5% using an epitaxial tunnel junction contact

Panpan Li, Hongjian Li, Haojun Zhang et al. · Applied Physics Letters · 2022 · 53 citations

Semiconductors, Photonics, Electrical Engineering +15

High-temperature electroluminescence properties of InGaN red 40 × 40 <b> <i>μ</i> </b>m2 micro-light-emitting diodes with a peak external quantum efficiency of 3.2%

Panpan Li, Aurélien David, Hongjian Li et al. · Applied Physics Letters · 2021 · 38 citations

Engineering, Optoelectronic Devices, Luminescence Property +16

Progress of InGaN-Based Red Micro-Light Emitting Diodes

Panpan Li, Hongjian Li, Matthew S. Wong et al. · Crystals · 2022 · 35 citations · Full text

White Oled, Photonics, Electrical Engineering +15

Demonstration of ultra-small 5 × 5 <i>μ</i>m2 607 nm InGaN amber micro-light-emitting diodes with an external quantum efficiency over 2%

Panpan Li, Hongjian Li, Yunxuan Yang et al. · Applied Physics Letters · 2022 · 21 citations

Optical Materials, Engineering, Optoelectronic Devices +20

InGaN amber micrometer-scale light-emitting diodes with a peak external quantum efficiency of 5.5%

Panpan Li, Hongjian Li, Yunxuan Yang et al. · Applied Physics Express · 2023 · 13 citations · Full text