22:T41b,Abstract The detection of ultraviolet (UV) radiation with effective performance and robust stability is essential to practical applications. Metal halide single‐crystal perovskites (ABX 3 ) are promising next‐generation materials for UV detection. The device performance of all‐inorganic CsPbCl 3 photodetectors (PDs) is still limited by inner imperfection of crystals grown in solution. Here wafer‐scale single‐crystal CsPbCl 3 thin films are successfully grown by vapor‐phase epitaxy method, and the as‐constructed PDs under UV light illumination exhibit an ultralow dark current of 7.18 pA, ultrahigh ON/OFF ratio of ≈5.22 × 10 5 , competitive responsivity of 32.8 A W −1 , external quantum efficiency of 10867% and specific detectivity of 4.22 × 10 12 Jones. More importantly, they feature superb long‐term stability toward moisture and oxygen within twenty‐one months, good temperature tolerances at low and high temperatures. The ability of the photodetector arrays for excellent UV light imaging is further demonstrated.23:T4c9,Abstract A single device with switchable functions is highly attractive to the growing demands of complex optoelectronics. However, most of the currently reported devices either exhibit a lack of multifunction operation or require complex electrode configurations with limited performances. Here, a new concept of a functionalized‐black phosphorus (f‐BP)/MoS 2 heterojunction is proposed, which enables the coexistence of an optoelectronic memory and a detector in a single device. The oxidation‐induced artificial‐traps on the BP surface result in a gate‐modulated photogating effect, so that the device can be freely switched between memory and detector by simply changing the back‐gate voltage. In the memory model, the device has an ultra‐long storage time (10 years), an ultra‐high on/off ratio (3.5 × 10 7 ), and outstanding multi‐bit storage (≈90 states), while in the detector model, the device still exhibits a fast response (130/260 µs), an impressive responsivity (22.2 A W −1 ), and self‐driven broadband detection (ultraviolet to near‐infrared). Most importantly, the highly anisotropic BP enables fast NIR polarization resolution with a maximum polarization ratio of 6.98 at 1064 nm.24:T4d1,Two-dimensional (2D) semiconductors have generated considerable attention for high-performance electronics and optoelectronics. However, to date, it is still challenging to mechanically exfoliate large-area and continuous monolayers while retaining their intrinsic properties. Here, we report a simple dry exfoliation approach to produce large-scale and continuous 2D monolayers by using a Ag film as the peeling tape. Importantly, the conducting Ag layer could be converted into AgO_x nanoparticles at low annealing temperature, directly decoupling the conducting Ag with the underlayer 2D monolayers without involving any solution or etching process. Electrical characterization of the monolayer MoS₂ transistor shows a decent carrier mobility of 42 cm² V^-1 s^-1 and on-state current of 142 μA/μm. Finally, a plasmonic enhancement photodetector could be simultaneously realized due to the direct formation of Ag nanoparticles arrays on MoS₂ monolayers, without complex approaches for nanoparticle synthesis and integration processes, demonstrating photoresponsivity and detectivity of 6.3 × 10⁵ A/W and 2.3 × 10¹³ Jones, respectively.25:T4f2,Vertical field effect transistors (VFETs) have attracted considerable interest for developing ultra-scaled devices. In particular, individual VFET can be stacked on top of another and does not consume additional chip footprint beyond what is needed for a single device at the bottom, representing another dimension for high-density transistors. However, high-density VFETs with small pitch size are difficult to fabricate and is largely limited by the trade-offs between drain thickness and its conductivity. Here, a simple approach is reported to scale t

#	Concept	H-Index	Publications	Citations
1	Engineering	4	4	252
2	Applied Physics	4	4	252
3	Materials Science	2	2	113
4	Chemistry	1	1	39
5	Electrical Engineering	1	1	39

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