Hironobu Katsuno

Synthesis and growth of 3C-SiC crystals from solution at 950°C

Akira Tanaka, N. Shiozaki, Hironobu Katsuno · Journal of Crystal Growth · 2002 · 18 citations

Materials Science, Materials Engineering, Engineering +5

Conversion from GaAs to GaAsP by Annealing a GaAs Layer on GaP in Ga-As-P Solution

Tokuzo Sukegawa, Haruhiko Udono, Masakazu Kimura et al. · Japanese Journal of Applied Physics · 1993 · 12 citations

Semiconductors, Materials Engineering, Electrical Engineering +15

A highly stable long-life GaP-GaAlP heterojunction cold cathode

Hirofumi Kan, T. Nakamura, Hironobu Katsuno et al. · Applied Physics Letters · 1979 · 11 citations

Wide-bandgap Semiconductor, Chemical Engineering, Electrical Engineering +8

GaN crystal growth on an SiC substrate from Ga wetting solution reacting with NH3

Akira Tanaka, Yutaka Funayama, Toichi Murakami et al. · Journal of Crystal Growth · 2003 · 11 citations

Materials Science, Engineering, Applied Physics +5

Growth of a GeSi thick alloy layer on a Si substrate by liquid phase epitaxy

Tokuzo Sukegawa, K. Yamashita, Hironobu Katsuno et al. · Journal of Crystal Growth · 1991 · 10 citations

Materials Science, Materials Engineering, Si Substrate +9